Speaker
Description
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. The IV-telluride family consists of normal semiconductor PbTe, inverted band gap semiconductor SnTe, and ferroelectric normal semicoductor GeTe. The pseudoternary alloy (Pb,Sn,Ge)Te thus allow for tuning band gap, topological properties, and ferroelectric transition temperature. Similar possibilities are also available in the selenide (Pb,Sn,Ge)Se family.
We will present utilization of a new closed-cycle helium cryostat mounted in a laboratory x-ray diffractometer.
The temperature dependent structural properties were studied in thin films of tellurides and selenides. The structural properties results are compared with electronic structure studied by ARPES and other techniques.
