Speaker
Description
The integration of two-dimensional ($2$D) materials into spintronic devices has long promised revolutionary improvements in performance and energy efficiency, yet progress has been hampered by interface contamination, oxidation-induced magnetic pinning, and compromised transmission at the $2$D/ferromagnetic (FM) junction. In our work, we introduce an advanced, single-step deposition process that simultaneously deposits asymmetric FM contacts onto atomically thin barriers such as graphene and molybdenum disulfide (MoS$_2$), thereby achieving pristine, ultra-clean interfaces.
Leveraging this novel fabrication method mediates oxidation and contamination effects and reveals the intrinsic response of the $2$D/FM junction. The resulting devices demonstrate exceptional magnetoresistance and significantly reduced coercivity, directly reflecting the inherent properties of the $2$D interface. We observe a novel metallization effect between MoS$_2$ and its contacts. The use of multilayer MoS$_2$ not only suppresses metallization effects but also restores semiconducting behavior, facilitating robust spin-filtering and yielding record-negative magnetoresistance values. Our advances underscore the critical importance of precise interface engineering in optimizing spin injection and magnetic anisotropy for the development of next-generation, $2$D spintronic devices.
Acknowledgements
This work was supported by the Taiwan National Science and Technology Council.
References
[1] T.-C. Huang et al., “Realizing High-Quality Interfaces in Two-Dimensional Material Spin Valves,” ACS Materials Letters, vol. 6, no. 1. American Chemical Society (ACS), pp. 94–99, Dec. 05, 2023. https://doi.org/10.1021/acsmaterialslett.3c01194
