Jul 7 – 11, 2025
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The Effect of Magnetization Direction and Stacking of Layers on Charge to Spin Conversion in Graphene on $1$T-TaS$_2$

4O-05
Jul 7, 2025, 6:00 PM
15m
ORAL Topic 4 - Magnetic materials and heterostructures for spintronics, topological and quantum magnetic phenomena Section S4

Speaker

Juraj Mnich (Pavol Jozef Šafárik University in Košice, Faculty of Science, Institute of Physics)

Description

Heterostructures of transition metal dichalcogenides and graphene provide vast utilization in proposals of novel platform devices [1] benefiting from the proximity-induced effects [2]. Monolayer $1$T-TaS$_2$ is a peculiar example as it is known for its low-temperature magnetism and charge density phase (CDW). The CDW arises as a spontaneous distortion in $1$T-TaS$_2$, forming the David star patterns [3]. The correlated state alters the electronic states of the proximitized graphene [4]. Focusing on the p$_z$ states of graphene, these effects can be captured within a tight-binding model, providing an insight into underlying proximity mechanisms.

Using the Kubo formalism, we study charge to spin interconversion effects in a $1$T-TaS$_2$/graphene heterostructure within the linear response regime. We investigate the impact of the magnetization direction in $1$T-TaS$_2$ on charge to spin interconversion efficiencies. Additionally, we explore different configurations of individual layers and identify the role of the tight-binding parameters in determining the ratio between the Rashba-Edelstein (REE) and the unconventional Rashba-Edelstein effect (UREE).

The (U)REE exhibits a non-trivial dependence on a chemical potential and is proportional to spin accumulation in the (parallel) perpendicular direction relative to the externally applied electric current. It is shown that the Rashba interaction plays a crucial role in the determination of charge to spin conversion coefficients, while the magnetization induces a relative shift of the Dirac cones manifesting in the additional non-analytical behaviour. Furthermore, the different stacking of $1$T-TaS$_2$ and graphene affects the Rashba phase, allowing a switch between UREE and REE.

Acknowledgements

This work has been funded by the EU NextGenerationEU through the Recovery and Resilience Plan for Slovakia under the project No. 09I03-03-V05-00008.

References

[1] J. Azadmanjiri et al., “Graphene-Supported 2D transition metal dichalcogenide van der waals heterostructures,” Applied Materials Today, vol. 19. Elsevier BV, p. 100600, Jun. 2020. https://doi.org/10.1016/j.apmt.2020.100600
[2] M. Gmitra and J. Fabian, “Proximity Effects in Bilayer Graphene on Monolayer WSe$_2$: Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor,” Physical Review Letters, vol. 119, no. 14. American Physical Society (APS), Oct. 04, 2017. https://doi.org/10.1103/physrevlett.119.146401
[3] D. C. Miller et al., “Charge density wave states in tantalum dichalcogenides,” Physical Review B, vol. 97, no. 4. American Physical Society (APS), Jan. 17, 2018. https://doi.org/10.1103/physrevb.97.045133
[4] K. Szałowski et al., “Spin–orbit and exchange proximity couplings in graphene/1T-TaS2 heterostructure triggered by a charge density wave,” 2D Materials, vol. 10, no. 2. IOP Publishing, p. 025013, Feb. 23, 2023. https://doi.org/10.1088/2053-1583/acbb19

Primary author

Juraj Mnich (Pavol Jozef Šafárik University in Košice, Faculty of Science, Institute of Physics)

Co-authors

Marko MIlivojevic (Institute of Informatics, Slovak Academy of Sciences) Dr Martin Gmitra (Pavol Jozef Šafárik University in Košice, Faculty of Science, Institute of Physics)

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